| 型号 | 品牌 | 相似度 | 封装 | 简介 | 数据手册 | |
|---|---|---|---|---|---|---|
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Kexin | 功能相似 |
NPN外延硅晶体管RF高频低噪声放大3 - pin电源MINIMOLD NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
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2SC3357
|
NEC (日本电气) | 功能相似 | SOT-89 |
NPN外延硅晶体管RF高频低噪声放大3 - pin电源MINIMOLD NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
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2SC3357
|
Renesas Electronics (瑞萨电子) | 功能相似 |
NPN外延硅晶体管RF高频低噪声放大3 - pin电源MINIMOLD NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD
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BFG135
|
Philips (飞利浦) | 功能相似 |
NPN 7GHz wideband transistor
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BFG35,115
|
NXP (恩智浦) | 功能相似 | TO-261-4 |
NXP BFG35,115 晶体管 双极-射频, NPN, 18 V, 4 GHz, 1 W, 150 mA, 70 hFE
|
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|
BFR96
|
Advanced Semiconductor | 功能相似 |
RF Small Signal Bipolar Transistor, 0.075A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN, 0.28INCH, PM-4
|
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MRF581
|
Motorola (摩托罗拉) | 功能相似 | Micro-X |
RF Small Signal Bipolar Transistor, 0.2A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN
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Advanced Semiconductor | 功能相似 |
RF Small Signal Bipolar Transistor, 0.2A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN
|
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MRF581
|
Microsemi (美高森美) | 功能相似 | Macro-X |
RF Small Signal Bipolar Transistor, 0.2A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN
|
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MRF586
|
Microsemi (美高森美) | 功能相似 | TO-205 |
射频与微波离散小功率三极管 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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Motorola (摩托罗拉) | 功能相似 | 244A-01 |
射频线NPN硅高频晶体管噪声系数3.0分贝@ 500MHz的 The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
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ON Semiconductor (安森美) | 功能相似 |
射频线NPN硅高频晶体管噪声系数3.0分贝@ 500MHz的 The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
|
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MRF587
|
M/A-Com | 功能相似 | 244A-01 |
射频线NPN硅高频晶体管噪声系数3.0分贝@ 500MHz的 The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
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MRF587
|
Advanced Semiconductor | 功能相似 | Case244-04 |
射频线NPN硅高频晶体管噪声系数3.0分贝@ 500MHz的 The RF Line NPN Silicon High Frequency Transistor Noise Figure 3.0 dB@ 500MHz
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