型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: MOS管描述: IRFU224PBF N-channel MOSFET Transistor, 3.8A, 250V, 3Pin TO-251749110-99¥6.4920100-499¥6.1674500-999¥5.95101000-1999¥5.94022000-4999¥5.89695000-7499¥5.84287500-9999¥5.7995≥10000¥5.7779
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品类: MOS管描述: 功率MOSFET Power MOSFET63455-24¥6.237025-49¥5.775050-99¥5.4516100-499¥5.3130500-2499¥5.22062500-4999¥5.10515000-9999¥5.0589≥10000¥4.9896
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品类: MOS管描述: MOSFET MOSFT 75V 260A 2.6mOhm 160NC26921-9¥41.711810-99¥39.3185100-249¥37.5406250-499¥37.2671500-999¥36.99361000-2499¥36.68592500-4999¥36.4124≥5000¥36.2414
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 600V 42A 3Pin(3+Tab) TO-247AC15015-49¥29.062850-199¥27.8208200-499¥27.1253500-999¥26.95141000-2499¥26.77752500-4999¥26.57885000-7499¥26.4546≥7500¥26.3304
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 650V 250A 880000mW 3Pin(3+Tab) PLUS 24741771-9¥111.354510-99¥106.5130100-249¥105.6415250-499¥104.9637500-999¥103.89861000-2499¥103.41442500-4999¥102.7366≥5000¥102.1557
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品类: MOS管描述: VISHAY SIHG25N40D-GE3 晶体管, MOSFET, N沟道, 25 A, 400 V, 0.14 ohm, 10 V, 3 V19625-49¥12.437150-199¥11.9056200-499¥11.6080500-999¥11.53361000-2499¥11.45912500-4999¥11.37415000-7499¥11.3210≥7500¥11.2678
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品类: IGBT晶体管描述: IGBT 分立,STMicroelectronics ### IGBT 分立件和模块,STMicroelectronics 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。796910-99¥9.3480100-499¥8.8806500-999¥8.56901000-1999¥8.55342000-4999¥8.49115000-7499¥8.41327500-9999¥8.3509≥10000¥8.3197
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品类: IGBT晶体管描述: STGW60H65DF 系列 650 V 120 A 场截止 沟道栅 IGBT - TO-247-364301-9¥54.448610-99¥51.3245100-249¥49.0037250-499¥48.6467500-999¥48.28971000-2499¥47.88802500-4999¥47.5310≥5000¥47.3078
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品类: MOS管描述: INFINEON IRFSL4510PBF 晶体管, MOSFET, N沟道, 61 A, 100 V, 0.0113 ohm, 10 V, 3 V65935-24¥3.159025-49¥2.925050-99¥2.7612100-499¥2.6910500-2499¥2.64422500-4999¥2.58575000-9999¥2.5623≥10000¥2.5272
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品类: IGBT晶体管描述: IGBT 分立,STMicroelectronics ### IGBT 分立件和模块,STMicroelectronics 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。45365-49¥27.951350-199¥26.7568200-499¥26.0879500-999¥25.92071000-2499¥25.75342500-4999¥25.56235000-7499¥25.4429≥7500¥25.3234
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品类: MOS管描述: N 通道 MOSFET,200V 至 250V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor940310-99¥10.4040100-499¥9.8838500-999¥9.53701000-1999¥9.51972000-4999¥9.45035000-7499¥9.36367500-9999¥9.2942≥10000¥9.2596
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 4000V 30A 160000mW 3Pin(3+Tab) ISOPLUS I4-PAC23401-9¥400.579510-49¥390.129650-99¥382.1180100-199¥379.3314200-499¥377.2414500-999¥374.45481000-1999¥372.7131≥2000¥370.9715
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品类: MOS管描述: IRLML2030TRPBF 编带645520-49¥0.580550-99¥0.5375100-299¥0.5160300-499¥0.4988500-999¥0.48591000-4999¥0.47735000-9999¥0.4687≥10000¥0.4601
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品类: MOS管描述: VISHAY IRLL110PBF 晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V, 2 V53775-24¥1.795525-49¥1.662550-99¥1.5694100-499¥1.5295500-2499¥1.50292500-4999¥1.46975000-9999¥1.4564≥10000¥1.4364
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品类: MOS管描述: N沟道,30V,86A,8mΩ@4.5V787510-49¥0.823550-99¥0.7808100-299¥0.7503300-499¥0.7320500-999¥0.71371000-2499¥0.69542500-4999¥0.6680≥5000¥0.6619
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品类: IGBT晶体管描述: N沟道6A - 600V DPAK非常快的PowerMESH IGBT N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH IGBT7786
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品类: MOS管描述: Trans MOSFET N-CH Si 25V 15A/30A 8Pin Power 56 T/R734010-99¥9.2880100-499¥8.8236500-999¥8.51401000-1999¥8.49852000-4999¥8.43665000-7499¥8.35927500-9999¥8.2973≥10000¥8.2663