技术参数/耗散功率: 350 mW
技术参数/漏源极电压(Vds): 60 V
技术参数/输入电容(Ciss): 40pF @10V(Vds)
技术参数/额定功率(Max): 350 mW
技术参数/工作温度(Max): 150 ℃
技术参数/工作温度(Min): -55 ℃
技术参数/耗散功率(Max): 350mW (Ta)
封装参数/安装方式: Surface Mount
封装参数/引脚数: 3
封装参数/封装: SOT-23-3
外形尺寸/高度: 1 mm
外形尺寸/封装: SOT-23-3
物理参数/材质: Silicon
物理参数/工作温度: 150℃ (TJ)
其他/产品生命周期: Unknown
其他/包装方式: Tape & Reel (TR)
符合标准/RoHS标准: RoHS Compliant
符合标准/含铅标准: Lead Free
| 型号 | 品牌 | 相似度 | 封装 | 简介 | 数据手册 | |
|---|---|---|---|---|---|---|
2N7000
|
Diodes (美台) | 类似代替 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
ST Microelectronics (意法半导体) | 类似代替 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
TI (德州仪器) | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
|
|
Suptertex | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
|
|
Supertex (超科) | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
NTE Electronics | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
Calogic | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
|
2N7000
|
InterFET | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
Major Brands | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
Diotec Semiconductor | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
UTC (友顺) | 类似代替 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
|
2N7000
|
National Semiconductor (美国国家半导体) | 类似代替 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
ON Semiconductor (安森美) | 类似代替 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7002E-T1-E3
|
VISHAY (威世) | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Semiconductor (威世) | 类似代替 | TO-236 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
||
2N7002E-T1-E3
|
Vishay Intertechnology | 类似代替 |
Trans MOSFET N-CH 60V 0.24A 3Pin TO-236 T/R
|
|||
BSS123-7-F
|
Diodes (美台) | 类似代替 | SOT-23-3 |
三极管
|
||
BSS123TA
|
Diodes Zetex (捷特科) | 功能相似 | SOT-23-3 |
DIODES INC. BSS123TA 晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
|
||
BSS138-7-F
|
Multicomp | 功能相似 | SOT-23 |
N沟道增强型场效应晶体管低导通电阻低栅极阈值电压低输入电容开关速度快低输入/输出漏
|
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