技术参数/漏源极电阻: 0.059 Ω
技术参数/耗散功率: 2.5 W
技术参数/漏源极电压(Vds): 12 V
技术参数/输入电容(Ciss): 1225pF @6V(Vds)
技术参数/工作温度(Max): 150 ℃
技术参数/工作温度(Min): -55 ℃
技术参数/耗散功率(Max): 1.25W (Ta), 2.5W (Tc)
封装参数/安装方式: Surface Mount
封装参数/引脚数: 3
封装参数/封装: SOT-23-3
外形尺寸/长度: 3.04 mm
外形尺寸/封装: SOT-23-3
物理参数/工作温度: -55℃ ~ 150℃
其他/产品生命周期: Active
符合标准/RoHS标准: RoHS Compliant
符合标准/含铅标准: Lead Free
| 型号 | 品牌 | 相似度 | 封装 | 简介 | 数据手册 | |
|---|---|---|---|---|---|---|
IRLML6401TRPBF
|
Infineon (英飞凌) | 功能相似 | SOT-23-3 |
-4.3A,-12V,P沟道功率MOSFET
|
||
IRLML6401TRPBF
|
Infineon | 功能相似 | SOT-23 |
-4.3A,-12V,P沟道功率MOSFET
|
||
IRLML6401TRPBF
|
TECH PUBLIC | 功能相似 | SOT-23 |
-4.3A,-12V,P沟道功率MOSFET
|
||
SI2315BDS-T1-E3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2315BDS-T1-E3
|
Vishay Intertechnology | 类似代替 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
|||
SI2315BDS-T1-E3
|
VISHAY (威世) | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2315BDS-T1-GE3
|
Vishay Siliconix | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2315BDS-T1-GE3
|
VISHAY (威世) | 类似代替 | SOT-23-3 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2315BDS-T1-GE3
|
Vishay Semiconductor (威世) | 类似代替 | SOT-23 |
TRANSISTOR 3000mA, 12V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3Pin, FET General Purpose Small Signal
|
||
SI2333DS-T1-E3
|
VISHAY | 类似代替 | TSOP51 |
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W
|
||
SI2333DS-T1-E3
|
VISHAY (威世) | 类似代替 | SOT-23-3 |
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W
|
||
SI2333DS-T1-E3
|
Vishay Semiconductor (威世) | 类似代替 | TO-236 |
MOSFET, Power; P-Ch; VDSS -12V; RDS(ON) 0.025Ω; ID -4.1A; TO-236 (SOT-23); PD 0.75W
|
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