技术参数/针脚数: 3
技术参数/漏源极电阻: 3 Ω
技术参数/极性: N-Channel
技术参数/耗散功率: 6.25 W
技术参数/阈值电压: 1.5 V
技术参数/漏源极电压(Vds): 90 V
技术参数/工作温度(Max): 150 ℃
封装参数/安装方式: Through Hole
封装参数/引脚数: 3
封装参数/封装: TO-205
外形尺寸/封装: TO-205
其他/产品生命周期: Unknown
其他/制造应用: 电源管理, 电机驱动与控制, 工业
符合标准/RoHS标准: RoHS Compliant
符合标准/含铅标准: Lead Free
符合标准/REACH SVHC版本: 2015/12/17
| 型号 | 品牌 | 相似度 | 封装 | 简介 | 数据手册 | |
|---|---|---|---|---|---|---|
2N6660
|
Vishay Siliconix | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
2N6660
|
Solid State | 功能相似 | TO-205 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
||
|
|
NJS | 功能相似 |
晶体管, MOSFET, DMOS, N沟道, 410 mA, 60 V, 3 ohm, 10 V, 2 V
|
|||
|
|
Suptertex | 功能相似 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
|||
2N6661
|
Solid State Devices | 功能相似 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
|||
|
|
Vishay Semiconductor (威世) | 功能相似 | TO-205 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
||
2N6661
|
Solid State | 功能相似 | TO-205 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
||
2N6661
|
Supertex (超科) | 功能相似 | TO-39 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
||
2N6661
|
Vishay Intertechnology | 功能相似 | TO-39-3 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
||
|
2N6661
|
NJS | 功能相似 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
|||
2N6661
|
Semelab | 功能相似 | TO-39 |
晶体管, MOSFET, 垂直DMOS FET, N沟道, 1.5 A, 90 V, 4 ohm, 10 V, 2 V
|
||
2N6661-E3
|
VISHAY (威世) | 功能相似 | TO-205 |
MOSFET N-CH 90V 0.86A TO-205
|
||
2N6661-E3
|
Vishay Semiconductor (威世) | 功能相似 | TO-205-3 |
MOSFET N-CH 90V 0.86A TO-205
|
||
2N6661-E3
|
Vishay Dale (威世达勒) | 功能相似 |
MOSFET N-CH 90V 0.86A TO-205
|
|||
2N7000
|
Diodes (美台) | 功能相似 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
ST Microelectronics (意法半导体) | 功能相似 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
TI (德州仪器) | 功能相似 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
|
|
Suptertex | 功能相似 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
|
|
Supertex (超科) | 功能相似 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
NTE Electronics | 功能相似 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
|
2N7000
|
Calogic | 功能相似 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
|
2N7000
|
InterFET | 功能相似 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
Major Brands | 功能相似 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
Diotec Semiconductor | 功能相似 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
2N7000
|
UTC (友顺) | 功能相似 | TO-92 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
|
2N7000
|
National Semiconductor (美国国家半导体) | 功能相似 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
|||
2N7000
|
ON Semiconductor (安森美) | 功能相似 | TO-92-3 |
NTE ELECTRONICS 2N7000 MOSFET Transistor, N Channel, 200mA, 60V, 1.2Ω, 10V, 800mV
|
||
BS170
|
GE (通用电气) | 功能相似 |
小信号N沟道TO-92-3封装场效应管
|
|||
BS170
|
onsemi/安森美 | 功能相似 | TO-92 |
小信号N沟道TO-92-3封装场效应管
|
||
BS170
|
ON Semiconductor (安森美) | 功能相似 | TO-226-3 |
小信号N沟道TO-92-3封装场效应管
|
||
BS170
|
Major Brands | 功能相似 | TO-92 |
小信号N沟道TO-92-3封装场效应管
|
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