技术参数/耗散功率: 30000 mW
技术参数/增益频宽积: 3 MHz
技术参数/击穿电压(集电极-发射极): 40 V
技术参数/最小电流放大倍数(hFE): 30 @500mA, 1V
技术参数/额定功率(Max): 30 W
技术参数/工作温度(Max): 150 ℃
技术参数/工作温度(Min): 65 ℃
封装参数/安装方式: Through Hole
封装参数/封装: TO-126-3
外形尺寸/封装: TO-126-3
物理参数/工作温度: -65℃ ~ 150℃ (TJ)
其他/产品生命周期: Active
其他/包装方式: Bulk
符合标准/RoHS标准: RoHS Compliant
符合标准/含铅标准: Lead Free
| 型号 | 品牌 | 相似度 | 封装 | 简介 | 数据手册 | |
|---|---|---|---|---|---|---|
2N4918
|
Central Semiconductor | 功能相似 | TO-126-3 |
1A, 40V, PNP, Si, POWER TRANSISTOR, TO-126
|
||
2N4918
|
NJS | 功能相似 |
1A, 40V, PNP, Si, POWER TRANSISTOR, TO-126
|
|||
|
2N4918
|
New Jersey Semiconductor | 功能相似 |
1A, 40V, PNP, Si, POWER TRANSISTOR, TO-126
|
|||
|
|
SavantIC Semiconductor | 功能相似 |
10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90W
|
|||
|
|
Quanzhou Jinmei Electronic | 功能相似 |
10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90W
|
|||
|
BD810
|
Inchange Semiconductor | 功能相似 |
10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90W
|
|||
BD810
|
ON Semiconductor (安森美) | 功能相似 | TO-220-3 |
10 AMPERE POWER TRANSISTORS PNP SILICON 60, 80 VOLTS 90W
|
||
|
|
Central Semiconductor | 功能相似 |
COMPLEMENTARY SILICON POWER TRANSISTORSo
|
|||
TIP34C
|
NTE Electronics | 功能相似 | TO-218 |
COMPLEMENTARY SILICON POWER TRANSISTORSo
|
||
|
|
Poinn | 功能相似 |
COMPLEMENTARY SILICON POWER TRANSISTORSo
|
|||
|
TIP34C
|
KEC(Korea Electronics) (KEC株式会社) | 功能相似 | TO-3 |
COMPLEMENTARY SILICON POWER TRANSISTORSo
|
||
|
TIP34C
|
Motorola (摩托罗拉) | 功能相似 |
COMPLEMENTARY SILICON POWER TRANSISTORSo
|
|||
|
TIP34C
|
Mospec | 功能相似 |
COMPLEMENTARY SILICON POWER TRANSISTORSo
|
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