| 型号 | 品牌 | 相似度 | 封装 | 简介 | 数据手册 | |
|---|---|---|---|---|---|---|
MRF8S21100HR3
|
NXP (恩智浦) | 完全替代 | NI-780H-2L |
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 24W Avg., 28V
|
||
MRF8S21100HR3
|
Freescale (飞思卡尔) | 完全替代 | NI-780 |
Single W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 24W Avg., 28V
|
||
MRF8S21100HSR3
|
NXP (恩智浦) | 功能相似 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
|
||
MRF8S21100HSR3
|
Freescale (飞思卡尔) | 功能相似 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
|
||
MRF8S21120HSR3
|
NXP (恩智浦) | 类似代替 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
|
||
MRF8S21120HSR3
|
Freescale (飞思卡尔) | 类似代替 | NI-780S |
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
|
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