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型号: IRFY9130
描述: Trans MOSFET P-CH 100V 11.2A 3Pin(3+Tab) TO-257AA
商品二维码
封 装: Through Hole
货 期:
包装方式: Bulk
标准包装数: 1
493.07  元 493.07元
1+:
¥ 567.0305
10+:
¥ 552.2384
50+:
¥ 540.8978
100+:
¥ 536.9532
200+:
¥ 533.9948
500+:
¥ 530.0503
1000+:
¥ 527.5849
2000+:
¥ 525.1196
数量
1+
10+
50+
100+
200+
价格
567.0305
552.2384
540.8978
536.9532
533.9948
价格 567.0305 552.2384 540.8978 536.9532 533.9948
起批量 1+ 10+ 50+ 100+ 200+
  • 运费   有货 运费价格:¥13.00
  • 数量
    库存(3649) 起订量(1)
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技术参数/额定电流:

-11.2 A

 

技术参数/极性:

P-Channel

 

技术参数/产品系列:

IRLS0Z0

 

技术参数/漏源极电压(Vds):

-100 V

 

技术参数/漏源击穿电压:

100 V

 

技术参数/连续漏极电流(Ids):

-11.2 A

 

封装参数/安装方式:

Through Hole

 

封装参数/引脚数:

3

 

其他/产品生命周期:

Unknown

 

其他/包装方式:

Bulk

 

符合标准/RoHS标准:

Non-Compliant

 

符合标准/含铅标准:

Contains Lead

 

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替代料

型号 品牌 相似度 封装 简介 数据手册
IRFY9130 IRFY9130 International Rectifier (国际整流器) 功能相似 Through Hole
HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
PDF
IRFY9130CM IRFY9130CM Infineon (英飞凌) 完全替代 TO-257
TO-257AA P-CH 100V 11.2A
PDF
IRFY9130 IRFY9130 Infineon (英飞凌) 功能相似 TO-257
HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
PDF
IRFY9130 IRFY9130 Semelab 功能相似 TO-220M
HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.

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