型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: 中高压MOS管描述: GENESIC SEMICONDUCTOR GA50JT12-247 碳化硅结晶体管, 1.2KV, 50A, TO-247AB16421+￥830.003210+￥800.880350+￥797.2399100+￥793.5996150+￥787.7750250+￥782.6785500+￥777.58201000+￥771.7574 -
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品类: P沟道MOS管描述: Trans MOSFET P-CH 60V 30A 3Pin(3+Tab) TO-220NIS49391+￥283.475010+￥276.080050+￥270.4105100+￥268.4385200+￥266.9595500+￥264.98751000+￥263.75502000+￥262.5225 -
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品类: 中高压MOS管描述: Trans JFET N-CH 1200V 20A SiC Automotive 3Pin(3+Tab) TO-247AB15841+￥190.894310+￥185.914450+￥182.0965100+￥180.7686200+￥179.7726500+￥178.44461000+￥177.61472000+￥176.7847 -
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品类: 中高压MOS管描述: INFINEON IPW60R045CPFKSA1 功率场效应管, MOSFET, N沟道, 60 A, 650 V, 0.04 ohm, 10 V, 3 V12881+￥190.515910+￥185.545950+￥181.7356100+￥180.4103200+￥179.4163500+￥178.09101000+￥177.26262000+￥176.4343 -
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品类: 中高压MOS管描述: IXYS SEMICONDUCTOR IXFN44N80 功率场效应管, MOSFET, N沟道, 44 A, 800 V, 165 mohm, 10 V, 4.5 V32311+￥143.250910+￥139.513950+￥136.6489100+￥135.6524200+￥134.9050500+￥133.90851000+￥133.28562000+￥132.6628 -
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品类: 中高压MOS管描述: INFINEON IPW65R019C7FKSA1 功率场效应管, MOSFET, N沟道, 75 A, 650 V, 0.017 ohm, 10 V, 3.5 V93831+￥134.597210+￥131.085950+￥128.3940100+￥127.4576200+￥126.7554500+￥125.81911000+￥125.23392000+￥124.6487 -
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品类: 中高压MOS管描述: IXYS SEMICONDUCTOR IXFH18N100Q3 功率场效应管, MOSFET, N沟道, 18 A, 1 kV, 0.66 ohm, 10 V, 6.5 V33991+￥127.326910+￥124.005350+￥121.4587100+￥120.5730200+￥119.9087500+￥119.02291000+￥118.46932000+￥117.9157 -
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品类: 中高压MOS管描述: GENESIC SEMICONDUCTOR GA10JT12-263 碳化硅结晶体管, 1.2KV, 10A, TO-26381631+￥114.655010+￥109.6700100+￥108.7727250+￥108.0748500+￥106.97811000+￥106.47962500+￥105.78175000+￥105.1835 -
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品类: 中高压MOS管描述: FAIRCHILD SEMICONDUCTOR FCH085N80_F155 功率场效应管, MOSFET, N沟道, 46 A, 800 V, 0.067 ohm, 10 V, 4.5 V 新96641+￥104.231410+￥99.6996100+￥98.8839250+￥98.2494500+￥97.25241000+￥96.79922500+￥96.16485000+￥95.6210 -
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品类: 中高压MOS管描述: NTE ELECTRONICS NTE2377 场效应管, MOSFET30941+￥100.285810+￥95.9255100+￥95.1407250+￥94.5302500+￥93.57101000+￥93.13492500+￥92.52455000+￥92.0013 -
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品类: 中高压MOS管描述: SupreMOS® MOSFET，Fairchild Semiconductor Fairchild 推出了新一代 600V 超级结 MOSFET - SupreMOS®。 与 Fairchild 的 600V SuperFET™ MOSFET 相比，其低 RDS（接通）和总栅极电荷让品质因素 (FOM) 降低了 40%。 此外，SupreMOS 系列为相同的 RDS（接通）提供低栅极电荷，提供极佳的切换性能，切换和传导损耗降低 20%，从而获得更高的效率。 这些特征让电源符合用于台式 PC 的 ENERGY STAR® 80 PLUS 黄金分类和用于服务器的白金分类。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。5179 -
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品类: 中高压MOS管描述: IXYS SEMICONDUCTOR IXFH12N100 功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 4.5 V44321+￥88.239510+￥84.4030100+￥83.7124250+￥83.1753500+￥82.33131000+￥81.94762500+￥81.41055000+￥80.9502 -
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品类: 中高压MOS管描述: FAIRCHILD SEMICONDUCTOR FCH47N60_F133 功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.058 ohm, 10 V, 3 V94061+￥87.878410+￥84.0576100+￥83.3699250+￥82.8349500+￥81.99441000+￥81.61232500+￥81.07745000+￥80.6189 -
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品类: 中高压MOS管描述: TO-3P N-CH 900V 14A31821+￥77.941310+￥74.5525100+￥73.9425250+￥73.4681500+￥72.72261000+￥72.38372500+￥71.90935000+￥71.5026 -
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品类: 中高压MOS管描述: NTE ELECTRONICS NTE2387. 场效应管, MOSFET, N沟道, 800V, 4A, TO-22013751+￥72.918110+￥69.7477100+￥69.1770250+￥68.7332500+￥68.03571000+￥67.71872500+￥67.27485000+￥66.8944 -
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品类: 中高压MOS管描述: STMICROELECTRONICS STW56N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 50 A, 600 V, 0.052 ohm, 10 V, 4 V 新6263 -
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品类: 中高压MOS管描述: Silicon Carbide Power MOSFET, N Channel, 31A, 1.2kV, 0.08Ω, 18V, 5.6V95751+￥66.939210+￥64.0288100+￥63.5049250+￥63.0975500+￥62.45721000+￥62.16612500+￥61.75875000+￥61.4094 -
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品类: 中高压MOS管描述: IXYS SEMICONDUCTOR IXFH12N100F 功率场效应管, MOSFET, N沟道, 12 A, 1 kV, 1.05 ohm, 10 V, 3 V42821+￥63.802010+￥61.0280100+￥60.5287250+￥60.1403500+￥59.53001000+￥59.25262500+￥58.86435000+￥58.5314 -
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品类: P沟道MOS管描述: Trans MOSFET P-CH 55V 74A 3Pin(3+Tab) TO-220AB50301+￥58.026710+￥55.5038100+￥55.0497250+￥54.6965500+￥54.14141000+￥53.88912500+￥53.53595000+￥53.2332 -
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品类: 中高压MOS管描述: INFINEON SPW35N60CFDFKSA1 功率场效应管, MOSFET, N沟道, 34.1 A, 600 V, 0.1 ohm, 10 V, 4 V66731+￥56.971610+￥53.7027100+￥51.2744250+￥50.9008500+￥50.52721000+￥50.10702500+￥49.73345000+￥49.4999 -
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品类: 中高压MOS管描述: INFINEON IPW60R099CPFKSA1 功率场效应管, MOSFET, N沟道, 31 A, 600 V, 99 mohm, 10 V, 3 V92211+￥53.705610+￥50.6242100+￥48.3351250+￥47.9829500+￥47.63071000+￥47.23452500+￥46.88245000+￥46.6623 -
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品类: 中高压MOS管描述: INFINEON IPW65R070C6FKSA1 功率场效应管, MOSFET, N沟道, 53.5 A, 650 V, 0.063 ohm, 10 V, 3 V72711+￥51.501110+￥48.5461100+￥46.3510250+￥46.0133500+￥45.67551000+￥45.29562500+￥44.95795000+￥44.7468 -
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品类: 中高压MOS管描述: FUJI ELECTRIC FMV30N60S1 功率场效应管, MOSFET, N沟道, 30 A, 600 V, 0.106 ohm, 10 V, 3 V91001+￥49.029410+￥46.2162100+￥44.1264250+￥43.8049500+￥43.48341000+￥43.12172500+￥42.80025000+￥42.5993 -
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品类: 中高压MOS管描述: INFINEON IPB60R199CPATMA1 功率场效应管, MOSFET, N沟道, 16 A, 650 V, 0.18 ohm, 10 V, 3 V76741+￥47.623910+￥44.8914100+￥42.8615250+￥42.5492500+￥42.23701000+￥41.88562500+￥41.57335000+￥41.3782 -
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品类: 中高压MOS管描述: ROHM SCT3160KL Power MOSFET, SiC, N Channel, 17A, 1.2kV, 0.16Ω, 18V, 5.6V New33071+￥47.104210+￥44.4015100+￥42.3938250+￥42.0849500+￥41.77601000+￥41.42852500+￥41.11975000+￥40.9266 -
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品类: 中高压MOS管描述: INFINEON IPB60R099CPATMA1 功率场效应管, MOSFET, N沟道, 31 A, 650 V, 0.09 ohm, 10 V, 3 V1122
