技术参数/通道数: 1
技术参数/耗散功率: 43W (Tc)
技术参数/漏源极电压(Vds): 100 V
技术参数/输入电容(Ciss): 180pF @25V(Vds)
技术参数/耗散功率(Max): 43W (Tc)
封装参数/安装方式: Surface Mount
封装参数/封装: TO-263-3
外形尺寸/长度: 10.67 mm
外形尺寸/宽度: 9.65 mm
外形尺寸/高度: 4.83 mm
外形尺寸/封装: TO-263-3
物理参数/工作温度: -55℃ ~ 175℃ (TJ)
其他/产品生命周期: Unknown
其他/包装方式: Tape & Reel (TR)
符合标准/RoHS标准: Non-Compliant
符合标准/含铅标准: Lead Free
| 型号 | 品牌 | 相似度 | 封装 | 简介 | 数据手册 | |
|---|---|---|---|---|---|---|
IRF510S
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRF510S
|
International Rectifier (国际整流器) | 类似代替 |
MOSFET N-CH 100V 5.6A D2PAK
|
|||
IRF510S
|
VISHAY (威世) | 类似代替 | TO-263 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRF510SPBF
|
VISHAY (威世) | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
IRF510SPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
IRF510SPBF
|
International Rectifier (国际整流器) | 功能相似 | D2PAK |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
IRF510SPBF
|
Vishay Intertechnology | 功能相似 | D2PAK |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
|
||
IRF510STRLPBF
|
Vishay Intertechnology | 功能相似 |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
|
|||
IRF510STRLPBF
|
Vishay Semiconductor (威世) | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
|
||
IRF510STRLPBF
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, SMD-220, D2PAK-3
|
||
|
|
International Rectifier (国际整流器) | 类似代替 |
MOSFET N-CH 100V 5.6A D2PAK
|
|||
IRF510STRRPBF
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRF510STRRPBF
|
VISHAY (威世) | 类似代替 | TO-252-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
||
IRF510STRRPBF
|
Vishay Semiconductor (威世) | 类似代替 | TO-263-3 |
MOSFET N-CH 100V 5.6A D2PAK
|
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