技术参数/频率: 1 MHz
技术参数/额定电压(DC): 60.0 V
技术参数/额定电流: 15.0 A
技术参数/额定功率: 115 W
技术参数/针脚数: 2
技术参数/极性: NPN
技术参数/耗散功率: 115 W
技术参数/集电极击穿电压: 100 V
技术参数/击穿电压(集电极-发射极): 60 V
技术参数/最小电流放大倍数(hFE): 20 @4A, 4V
技术参数/最大电流放大倍数(hFE): 70
技术参数/额定功率(Max): 115 W
技术参数/直流电流增益(hFE): 70
技术参数/工作温度(Max): 200 ℃
技术参数/工作温度(Min): -65 ℃
技术参数/耗散功率(Max): 115000 mW
封装参数/安装方式: Through Hole
封装参数/引脚数: 2
封装参数/封装: TO-3
外形尺寸/长度: 39.5 mm
外形尺寸/宽度: 26.2 mm
外形尺寸/高度: 8.7 mm
外形尺寸/封装: TO-3
物理参数/材质: Silicon
物理参数/工作温度: -65℃ ~ 200℃
其他/产品生命周期: Not Recommended for New Designs
其他/包装方式: Tray
其他/制造应用: Portable Devices, 消费电子产品, Consumer Electronics, Industrial, 便携式器材, 工业, 电源管理, Power Management
符合标准/RoHS标准: RoHS Compliant
符合标准/含铅标准: Lead Free
符合标准/REACH SVHC标准: No SVHC
符合标准/REACH SVHC版本: 2014/06/16
海关信息/ECCN代码: EAR99
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2N6609
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