技术参数/耗散功率: 1 W
技术参数/工作温度(Max): 200 ℃
技术参数/工作温度(Min): -65 ℃
技术参数/耗散功率(Max): 1000 mW
封装参数/安装方式: Through Hole
封装参数/引脚数: 3
封装参数/封装: TO-39
外形尺寸/封装: TO-39
物理参数/材质: Silicon
其他/产品生命周期: Active
其他/包装方式: Bag
符合标准/RoHS标准: Non-Compliant
符合标准/含铅标准: Lead Free
海关信息/ECCN代码: EAR99
| 型号 | 品牌 | 相似度 | 封装 | 简介 | 数据手册 | |
|---|---|---|---|---|---|---|
|
|
Fairchild (飞兆/仙童) | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
|
||
|
|
ETC | 功能相似 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
|
|||
2N4234
|
Solitron Devices | 功能相似 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
|
|||
2N4234
|
Microsemi (美高森美) | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
|
||
|
2N4234
|
Micro Electronics | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
|
||
|
2N4234
|
CDIL | 功能相似 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
|
|||
2N4234
|
Multicomp | 功能相似 | TO-39 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
|
||
|
2N4234
|
API Technologies | 功能相似 |
Small Signal Bipolar Transistor, 1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5,
|
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