技术参数/漏源极电阻: 0.055 Ω
技术参数/极性: N-Channel
技术参数/耗散功率: 150 W
技术参数/阈值电压: 4 V
技术参数/漏源极电压(Vds): 100 V
技术参数/漏源击穿电压: 100V (min)
技术参数/连续漏极电流(Ids): 40.0 A
技术参数/工作温度(Max): 150 ℃
封装参数/安装方式: Through Hole
封装参数/引脚数: 2
封装参数/封装: TO-3
外形尺寸/封装: TO-3
物理参数/工作温度: -55℃ ~ 150℃
其他/产品生命周期: Active
符合标准/RoHS标准: RoHS Compliant
海关信息/ECCN代码: EAR99
海关信息/HTS代码: 85412900951
| 型号 | 品牌 | 相似度 | 封装 | 简介 | 数据手册 | |
|---|---|---|---|---|---|---|
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Microsemi (美高森美) | 功能相似 |
N-CH 100V 38A
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IRF150
|
Fairchild (飞兆/仙童) | 功能相似 | BFM |
40A ， 100V ， 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
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IRF150
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IXYS Semiconductor | 功能相似 |
40A ， 100V ， 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
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IRF150
|
Intersil (英特矽尔) | 功能相似 |
40A ， 100V ， 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
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IRF150
|
International Rectifier (国际整流器) | 功能相似 | TO-3 |
40A ， 100V ， 0.055 Ohm的N通道功率MOSFET 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET
|
||
JANTXV2N6764
|
International Rectifier (国际整流器) | 类似代替 |
The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high trans conductance; superior reverse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
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