技术参数/正向电压: | 840mV @10A |
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技术参数/最大正向浪涌电流(Ifsm): | 125 A |
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技术参数/正向电压(Max): | 700mV @5A |
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封装参数/安装方式: | Through Hole |
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封装参数/引脚数: | 3 |
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封装参数/封装: | TO-220-3 |
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外形尺寸/宽度: | 4.82 mm |
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外形尺寸/封装: | TO-220-3 |
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物理参数/工作温度: | -65℃ ~ 150℃ |
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其他/产品生命周期: | Active |
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其他/包装方式: | Tube |
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符合标准/RoHS标准: | RoHS Compliant |
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符合标准/含铅标准: | Lead Free |
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| 型号 | 品牌 | 相似度 | 封装 | 简介 | 数据手册 | |
|---|---|---|---|---|---|---|
MBR1045CT
|
Diodes (美台) | 功能相似 | TO-220-3 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
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|
Luguang Electronic | 功能相似 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
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|
Gaomi Xinghe Electronics | 功能相似 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
|||
MBR1045CT
|
Taiwan Semiconductor (台湾半导体) | 功能相似 | TO-220 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
MBR1045CT
|
Galaxy Semi-Conductor | 功能相似 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
|||
|
|
LiteOn (光宝) | 功能相似 | TO-220 |
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 45V V(RRM), Silicon, TO-220AB, PLASTIC PACKAGE-3
|
||
|
|
Micro Commercial Components (美微科) | 功能相似 |
Product Specification
|
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MBRF1045CT
|
Taiwan Semiconductor (台湾半导体) | 功能相似 | ITO-220-3 |
Product Specification
|
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