技术参数/针脚数: | 6 |
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技术参数/极性: | NPN, PNP |
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技术参数/耗散功率: | 200 mW |
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技术参数/击穿电压(集电极-发射极): | 50 V |
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技术参数/集电极最大允许电流: | 100mA |
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技术参数/直流电流增益(hFE): | 100 |
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技术参数/工作温度(Max): | 150 ℃ |
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封装参数/安装方式: | Surface Mount |
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封装参数/引脚数: | 6 |
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封装参数/封装: | SOT-363 |
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外形尺寸/封装: | SOT-363 |
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其他/产品生命周期: | Unknown |
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其他/包装方式: | Cut Tape (CT) |
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其他/制造应用: | Industrial, Power Management, Automation & Process Control, Automotive, Computers & Computer Peripherals |
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符合标准/RoHS标准: | RoHS Compliant |
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符合标准/REACH SVHC标准: | No SVHC |
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符合标准/REACH SVHC版本: | 2015/12/17 |
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| 型号 | 品牌 | 相似度 | 封装 | 简介 | 数据手册 | |
|---|---|---|---|---|---|---|
MUN5314DW1T1G
|
ON Semiconductor (安森美) | 功能相似 | SC-70-6 |
ON SEMICONDUCTOR MUN5314DW1T1G 晶体管 双极预偏置/数字, BRT, 50 V, 100 mA, 10 kohm, 47 kohm, 4.7 电阻比率, SOT-363
|
||
PUMD9,115
|
NXP (恩智浦) | 完全替代 | TSSOP-6 |
NXP PUMD9,115 双极晶体管阵列, BRT, NPN, PNP, 50 V, 200 mW, 100 mA, 100 hFE, SOT-363
|
||
UMD9NTR
|
ROHM Semiconductor (罗姆半导体) | 功能相似 | SC-70-6 |
NPN+PNP 晶体管,ROHM ### Digital Transistors, ROHM Resistor-equipped bipolar transistors, also known as Digital Transistors or Bias Resistor Transistors, incorporating one or two integrated resistors. A single series input resistor, or a potential divider of two resistors, allows these devices to be directly driven from digital sources. Both single and dual transistor versions are available.
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