型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: 存储芯片描述: CY62128EV30 系列 1 Mb (128 K × 8) 表面贴装 静态 RAM - STSOP-32896810+￥9.8040100+￥9.3138500+￥8.98701000+￥8.97072000+￥8.90535000+￥8.82367500+￥8.758210000+￥8.7256 -
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品类: 存储芯片描述: 72 - Mbit的QDR -II SRAM ™ 2字突发架构 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture82651+￥313.294510+￥305.121650+￥298.8557100+￥296.6763200+￥295.0417500+￥292.86231000+￥291.50012000+￥290.1380 -
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品类: 存储芯片描述: 72 - Mbit的QDR II SRAM 4字突发架构 72-Mbit QDR II SRAM 4-Word Burst Architecture86271+￥320.585510+￥312.222450+￥305.8107100+￥303.5805200+￥301.9079500+￥299.67781000+￥298.28392000+￥296.8901 -
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品类: 存储芯片描述: SRAM Chip Sync Dual 1.8V 18M-Bit 2M x 9Bit 0.45ns 165Pin FBGA T/R82261+￥163.001010+￥158.748850+￥155.4888100+￥154.3549200+￥153.5044500+￥152.37051000+￥151.66182000+￥150.9531 -
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品类: 存储芯片描述: 72兆位的DDR - II SRAM的2字突发架构 72-Mbit DDR-II SRAM 2-Word Burst Architecture91191+￥260.946510+￥254.139250+￥248.9203100+￥247.1050200+￥245.7435500+￥243.92831000+￥242.79372000+￥241.6592 -
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品类: 存储芯片描述: 72 - Mbit的QDR - II SRAM的2字突发架构 72-Mbit QDR-II SRAM 2-Word Burst Architecture71821+￥346.598510+￥337.556850+￥330.6248100+￥328.2137200+￥326.4054500+￥323.99431000+￥322.48732000+￥320.9804 -
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品类: 存储芯片描述: 静态随机存取存储器 SYNC 静态随机存取存储器S95481+￥115.609510+￥112.593650+￥110.2814100+￥109.4772200+￥108.8740500+￥108.06981000+￥107.56712000+￥107.0645 -
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品类: 存储芯片描述: 36兆位的DDR -II + SRAM 2字突发架构（ 2.5周期读延迟） 36-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)11171+￥105.110010+￥100.5400100+￥99.7174250+￥99.0776500+￥98.07221000+￥97.61522500+￥96.97545000+￥96.4270 -
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品类: 存储芯片描述: CY7C1425JV18 36 Mb (4Mx9) 267 MHz 1.8 V QDR™-II 2 字 突发 SRAM - FBGA-16539581+￥346.828510+￥337.780850+￥330.8442100+￥328.4315200+￥326.6220500+￥324.20931000+￥322.70132000+￥321.1934 -
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品类: 存储芯片描述: CY7C09089V 系列 512 Kb (64 K x 8) 3.3 V 12 ns 双端口 静态RAM TQFP-10029681+￥73.784010+￥70.5760100+￥69.9986250+￥69.5494500+￥68.84371000+￥68.52292500+￥68.07385000+￥67.6888 -
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品类: 存储芯片描述: 3.3V 32K / 64K / 128K X 8/9同步双端口静态RAM 3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM50661+￥107.985010+￥103.2900100+￥102.4449250+￥101.7876500+￥100.75471000+￥100.28522500+￥99.62795000+￥99.0645 -
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品类: 存储芯片描述: 3.3V 32K / 64K X 16/18双端口静态RAM 3.3V 32K/64K x 16/18 Dual-Port Static RAM93581+￥58.401410+￥55.0505100+￥52.5613250+￥52.1783500+￥51.79531000+￥51.36452500+￥50.98165000+￥50.7422 -
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品类: 时钟信号器件描述: CY2308 系列 单 PLL 3.3 V 133 MHz 零延时时钟缓冲器 表面贴装 - SOIC-16590820+￥0.054050+￥0.0500100+￥0.0480300+￥0.0464500+￥0.04521000+￥0.04445000+￥0.043610000+￥0.0428 -
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品类: 存储芯片描述: IC SRAM 4Mbit 45NS 48VFBGA35335+￥22.674650+￥21.7056200+￥21.1630500+￥21.02731000+￥20.89162500+￥20.73665000+￥20.63977500+￥20.5428 -
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品类: 时钟信号器件描述: 1个基准输入,5个输出,带内部反馈15395+￥14.320850+￥13.7088200+￥13.3661500+￥13.28041000+￥13.19472500+￥13.09685000+￥13.03567500+￥12.9744 -
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品类: 存储芯片描述: 4兆位（ 512K的X 256分之8的K× 16 ）的nvSRAM 25 ns到45 ns的访问时间 4-Mbit (512 K x 8 / 256 K x 16) nvSRAM 25 ns and 45 ns access times500710+￥7.0080100+￥6.6576500+￥6.42401000+￥6.41232000+￥6.36565000+￥6.30727500+￥6.260510000+￥6.2371 -
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品类: 时钟信号器件描述: 一PLL通用的Flash可编程和2线串行可编程时钟发生器 One-PLL General-Purpose Flash-Programmable and 2-Wire Serially Programmable Clock Generator213820+￥0.526550+￥0.4875100+￥0.4680300+￥0.4524500+￥0.44071000+￥0.43295000+￥0.425110000+￥0.4173 -
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品类: 存储芯片描述: 静态随机存取存储器 2M, 3.3V, 55ns 256K x 8 Asynch 静态随机存取存储器53485+￥26.687750+￥25.5472200+￥24.9085500+￥24.74891000+￥24.58922500+￥24.40675000+￥24.29277500+￥24.1786 -
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品类: 电源管理描述: 交流电机电压调整场效应管驱动器96465+￥16.052450+￥15.3664200+￥14.9822500+￥14.88621000+￥14.79022500+￥14.68045000+￥14.61187500+￥14.5432
