型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: MOS管描述: Trans MOSFET N-CH 75V 180A 7Pin(6+Tab) D2PAK T/R15545-24¥4.671025-49¥4.325050-99¥4.0828100-499¥3.9790500-2499¥3.90982500-4999¥3.82335000-9999¥3.7887≥10000¥3.7368
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品类: MOS管描述: Trans MOSFET N-CH 30V 35A 8Pin WPAK T/R403120-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: MOSFET N-CHAN 100V DPAK637920-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: Trans MOSFET N-CH 60V 13A 8Pin PowerDI T/R41605-24¥3.280525-49¥3.037550-99¥2.8674100-499¥2.7945500-2499¥2.74592500-4999¥2.68525000-9999¥2.6609≥10000¥2.6244
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品类: MOS管描述: SSM3J338R,LF 编带897920-49¥0.621050-99¥0.5750100-299¥0.5520300-499¥0.5336500-999¥0.51981000-4999¥0.51065000-9999¥0.5014≥10000¥0.4922
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品类: MOS管描述: T&R / MOSFET, P-CHANNEL, -30V, -40A, 4.6mOhm, -4.5V capable, PQFN5x6611220-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: Chip P-CH 20V 2.7A450020-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: P沟道8 -V (D -S ) , 175℃ MOSFET P-Channel 8-V (D-S), 175C MOSFET237920-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: 双极性晶体管描述: Trans JFET 150V GaN 3Pin Case QP-5553641-9¥3703.326010-24¥3669.659425-49¥3652.826150-99¥3635.9928100-149¥3619.1595150-249¥3602.3262250-499¥3585.4929≥500¥3568.6596
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品类: MOS管描述: Trans JFET N-CH 3Pin TO-236457620-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: 双极性晶体管描述: MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR44575-24¥3.820525-49¥3.537550-99¥3.3394100-499¥3.2545500-2499¥3.19792500-4999¥3.12725000-9999¥3.0989≥10000¥3.0564
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品类: MOS管描述: MOSFET HIREL199420-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: INFINEON IPB117N20NFDATMA1 晶体管, MOSFET, N沟道, 84 A, 200 V, 0.0103 ohm, 10 V, 3 V 新36821-9¥40.735810-99¥38.3985100-249¥36.6622250-499¥36.3951500-999¥36.12801000-2499¥35.82752500-4999¥35.5604≥5000¥35.3934
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品类: IGBT晶体管描述: MOSFET IGBT PRODUCTS668020-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: JFET晶体管描述: Trans JFET 15V 14A 3Pin 2-16G1B539520-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: MOS管描述: 2SK1485 N沟道MOSFET 100V 1mA SOT-89 marking/标记 NC 直接驱动IC工作/低导通电阻/与2SJ197互补328110-49¥1.269050-99¥1.2032100-299¥1.1562300-499¥1.1280500-999¥1.09981000-2499¥1.07162500-4999¥1.0293≥5000¥1.0199
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品类: 双极性晶体管描述: Transistors (BJT) - Single, Pre-Biased989920-49¥0.202550-99¥0.1875100-299¥0.1800300-499¥0.1740500-999¥0.16951000-4999¥0.16655000-9999¥0.1635≥10000¥0.1605
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品类: MOS管描述: TO-220AB N-CH 60V 84A21055-49¥28.899050-199¥27.6640200-499¥26.9724500-999¥26.79951000-2499¥26.62662500-4999¥26.42905000-7499¥26.3055≥7500¥26.1820
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品类: 双极性晶体管描述: 射频线NPN硅功率晶体管25W ( PEP ) ,在30MHz , 28V The RF Line NPN Silicon Power Transistor 25W(PEP), 30MHz, 28V26001-9¥343.574010-49¥334.611250-99¥327.7397100-199¥325.3496200-499¥323.5571500-999¥321.16701000-1999¥319.6732≥2000¥318.1794
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品类: MOS管描述: N沟道60V - 0.08欧姆 - 12A IPAK / DPAK STripFET⑩ II功率MOSFET N-CHANNEL 60V - 0.08 ohm - 12A IPAK/DPAK STripFET⑩ II POWER MOSFET412610-49¥1.269050-99¥1.2032100-299¥1.1562300-499¥1.1280500-999¥1.09981000-2499¥1.07162500-4999¥1.0293≥5000¥1.0199
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品类: IGBT晶体管描述: FF300R12KE3 power transistor module. 62mm C-series module with trench/fieldstop IGBT3 and EmCon High Efficiency diode...86391-9¥1201.871010-24¥1190.944925-49¥1185.481950-99¥1180.0188100-149¥1174.5558150-249¥1169.0927250-499¥1163.6297≥500¥1158.1666
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品类: MOS管描述: TO-220AB N-CH 250V 20A458510-99¥10.5720100-499¥10.0434500-999¥9.69101000-1999¥9.67342000-4999¥9.60295000-7499¥9.51487500-9999¥9.4443≥10000¥9.4091
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品类: IGBT晶体管描述: IGBT 分立元件,IXYS XPT 系列 IXYS 的 XPT™ 系列分立件 IGBT 采用超轻穿通薄芯片技术,可降低热电阻和能源损耗。 这些设备提供快速切换时间,具有低尾线电流,并提供各种工业标准和专有封装。 高功率密度和低 VCE(sat) 方形反向偏置安全工作区域 (RBSOA) 高达额定击穿电压 短路容量,确保 10usec 正向通态电压温度系数 可选 Co-Pack Sonic-FRD™ 或 HiPerFRED™ 二极管 国际标准和专有高电压封装 ### IGBT 分立元件和模块,IXYS 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。23511-9¥95.990510-99¥91.8170100-249¥91.0658250-499¥90.4815500-999¥89.56331000-2499¥89.14602500-4999¥88.5617≥5000¥88.0609
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品类: MOS管描述: TO-247 N-CH 650V 35A94161-9¥38.064010-99¥35.8800100-249¥34.2576250-499¥34.0080500-999¥33.75841000-2499¥33.47762500-4999¥33.2280≥5000¥33.0720
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品类: 双极性晶体管描述: STMICROELECTRONICS ULN2001D1013TR 双极晶体管阵列, 达林顿, 双NPN, 50 V, 500 mA, 1000 hFE, SOIC983410-49¥0.918050-99¥0.8704100-299¥0.8364300-499¥0.8160500-999¥0.79561000-2499¥0.77522500-4999¥0.7446≥5000¥0.7378
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品类: 双极性晶体管描述: ON Semiconductor ### 标准 带 NSV 前缀的制造商部件号具有汽车资格,符合 AEC-Q101 标准。 ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 功率晶体管 双晶体管 复合晶体管对 高电压晶体管 射频晶体管 双极/FET 晶体管230520-49¥0.405050-99¥0.3750100-299¥0.3600300-499¥0.3480500-999¥0.33901000-4999¥0.33305000-9999¥0.3270≥10000¥0.3210
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品类: MOS管描述: 的OptiMOS -T2功率三极管 OptiMOS-T2 Power-Transistor38195-24¥5.076025-49¥4.700050-99¥4.4368100-499¥4.3240500-2499¥4.24882500-4999¥4.15485000-9999¥4.1172≥10000¥4.0608
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品类: 双极性晶体管描述: ON SEMICONDUCTOR SBC856BDW1T1G 双极晶体管阵列, 双PNP, -65 V, 380 mW, 100 mA, 150 hFE, SOT-363 新294420-49¥0.580550-99¥0.5375100-299¥0.5160300-499¥0.4988500-999¥0.48591000-4999¥0.47735000-9999¥0.4687≥10000¥0.4601