型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: 双极性晶体管描述: 射频(RF)双极晶体管 NPN High Frequency471410-99¥6.6960100-499¥6.3612500-999¥6.13801000-1999¥6.12682000-4999¥6.08225000-7499¥6.02647500-9999¥5.9818≥10000¥5.9594
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品类: 双极性晶体管描述: Trans RF BJT NPN 12V 0.1A 3Pin SOT-23 T/R781620-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: 双极性晶体管描述: Trans RF BJT NPN 6V 0.1A 3Pin SOT-23 T/R687720-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: 双极性晶体管描述: Trans GP BJT NPN 15V 0.05A 3Pin SOT-323 T/R441320-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: 双极性晶体管描述: SAME AS 2SC4093 NPN SILICON AM53355-24¥5.562025-49¥5.150050-99¥4.8616100-499¥4.7380500-2499¥4.65562500-4999¥4.55265000-9999¥4.5114≥10000¥4.4496
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品类: MOS管描述: 0.5W(1/2W) X, Ku-BAND POWER GaAs MES FET321620-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: 双极性晶体管描述: NPN silicon high frequency transistor.632020-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: 双极性晶体管描述: 射频(RF)双极晶体管 NPN SiGe High Freq72355-24¥6.601525-49¥6.112550-99¥5.7702100-499¥5.6235500-2499¥5.52572500-4999¥5.40355000-9999¥5.3546≥10000¥5.2812
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品类: 双极性晶体管描述: Trans GP BJT NPN 10V 0.065A 4Pin SOT-143686410-99¥6.0960100-499¥5.7912500-999¥5.58801000-1999¥5.57782000-4999¥5.53725000-7499¥5.48647500-9999¥5.4458≥10000¥5.4254
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品类: 双极性晶体管描述: Trans GP BJT NPN 6V 0.03A 6Pin Ultra SOT-363 T/R18295-24¥3.240025-49¥3.000050-99¥2.8320100-499¥2.7600500-2499¥2.71202500-4999¥2.65205000-9999¥2.6280≥10000¥2.5920
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品类: 双极性晶体管描述: Trans RF BJT NPN 6V 0.05A 4Pin Case M04 T/R402710-99¥6.1440100-499¥5.8368500-999¥5.63201000-1999¥5.62182000-4999¥5.58085000-7499¥5.52967500-9999¥5.4886≥10000¥5.4682
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品类: 双极性晶体管描述: Trans RF BJT NPN 12V 0.15A 4Pin(3+Tab) SOT-8940395-49¥21.563150-199¥20.6416200-499¥20.1256500-999¥19.99661000-2499¥19.86752500-4999¥19.72015000-7499¥19.6280≥7500¥19.5358
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品类: 双极性晶体管描述: Trans RF BJT NPN 5V 0.1A 3Pin Super Lead-Less Mini-Mold T/R525320-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 390V 20A Automotive 3Pin(2+Tab) D2PAK Rail63575-24¥6.588025-49¥6.100050-99¥5.7584100-499¥5.6120500-2499¥5.51442500-4999¥5.39245000-9999¥5.3436≥10000¥5.2704
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 430V 18A 3Pin(2+Tab) D2PAK T/R49985-24¥6.588025-49¥6.100050-99¥5.7584100-499¥5.6120500-2499¥5.51442500-4999¥5.39245000-9999¥5.3436≥10000¥5.2704
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品类: IGBT晶体管描述: Motor / Motion / Ignition Controllers & Drivers IGBT D2PAK 350V 20A471010-99¥9.5280100-499¥9.0516500-999¥8.73401000-1999¥8.71812000-4999¥8.65465000-7499¥8.57527500-9999¥8.5117≥10000¥8.4799
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品类: IGBT晶体管描述: 点火IGBT 20 A, 350 V, N沟道D2PAK Ignition IGBT 20 A, 350 V, N−Channel D2PAK119120-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 390V 20A 3Pin(2+Tab) D2PAK T/R334520-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 440V 20A 3Pin(2+Tab) D2PAK T/R776020-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 440V 15A 3Pin(2+Tab) DPAK T/R198420-49¥0.000050-99¥0.0000100-299¥0.0000300-499¥0.0000500-999¥0.00001000-4999¥0.00005000-9999¥0.0000≥10000¥0.0000
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品类: IGBT晶体管描述: IGBT 分立,On Semiconductor 绝缘栅级双极性晶体管 (IGBT),用于电动机驱动器和其他高电流切换应用。 ### IGBT 分立,On Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。88071-9¥38.991210-99¥36.7540100-249¥35.0921250-499¥34.8364500-999¥34.58071000-2499¥34.29312500-4999¥34.0374≥5000¥33.8776
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品类: IGBT晶体管描述: IGBT 分立,On Semiconductor ### IGBT 分立,On Semiconductor 绝缘栅级双极性晶体管或 IGBT 是一种三端子功率半导体设备,以高效和快速切换著称。 IGBT 通过将用于控制输入的隔离栅极 FET 和用作开关的双极性功率晶体管组合在单个设备中,将 MOSFET 的简单栅极驱动特性与双极性晶体管的高电流和低饱和电压能力组合在一起。70385-24¥4.036525-49¥3.737550-99¥3.5282100-499¥3.4385500-2499¥3.37872500-4999¥3.30405000-9999¥3.2741≥10000¥3.2292
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品类: IGBT晶体管描述: ON SEMICONDUCTOR NGTB30N120FL2WG 单晶体管, IGBT, 60 A, 2 V, 452 W, 1.2 kV, TO-247, 3 引脚80681-9¥39.003410-99¥36.7655100-249¥35.1031250-499¥34.8473500-999¥34.59151000-2499¥34.30382500-4999¥34.0481≥5000¥33.8882
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品类: IGBT晶体管描述: 单晶体管, IGBT, 30 A, 1.4 V, 225 mW, 600 V, TO-247, 3 引脚87625-49¥33.169550-199¥31.7520200-499¥30.9582500-999¥30.75981000-2499¥30.56132500-4999¥30.33455000-7499¥30.1928≥7500¥30.0510
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品类: IGBT晶体管描述: UPS / 太阳能 1200 V 160 A 法兰安装 超级 场截止 IGBT - TO-247-336261-9¥37.051410-99¥34.9255100-249¥33.3463250-499¥33.1033500-999¥32.86031000-2499¥32.58702500-4999¥32.3441≥5000¥32.1922
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品类: IGBT晶体管描述: ON SEMICONDUCTOR NGTB30N60SWG 单晶体管, IGBT, 60 A, 1.9 V, 189 W, 600 V, TO-247, 3 引脚26895-49¥18.579650-199¥17.7856200-499¥17.3410500-999¥17.22981000-2499¥17.11862500-4999¥16.99165000-7499¥16.9122≥7500¥16.8328
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品类: IGBT晶体管描述: ON SEMICONDUCTOR NGTB30N120IHSWG 单晶体管, IGBT, 60 A, 2 V, 192 W, 1.2 kV, TO-247, 3 引脚32545-49¥14.320850-199¥13.7088200-499¥13.3661500-999¥13.28041000-2499¥13.19472500-4999¥13.09685000-7499¥13.0356≥7500¥12.9744
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品类: IGBT晶体管描述: ON SEMICONDUCTOR NGTB30N120IHLWG 单晶体管, IGBT, 60 A, 1.75 V, 260 W, 1.2 kV, TO-247, 3 引脚10851-9¥193.326510-49¥188.283250-99¥184.4167100-199¥183.0718200-499¥182.0631500-999¥180.71831000-1999¥179.8777≥2000¥179.0372
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品类: IGBT晶体管描述: ON SEMICONDUCTOR NGTB30N60IHLWG 单晶体管, IGBT, 60 A, 1.8 V, 250 W, 600 V, TO-247, 3 引脚53085-49¥17.491550-199¥16.7440200-499¥16.3254500-999¥16.22081000-2499¥16.11612500-4999¥15.99655000-7499¥15.9218≥7500¥15.8470
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品类: IGBT晶体管描述: Trans IGBT Chip N-CH 600V 100A 3Pin TO-247 Tube10755-49¥23.856350-199¥22.8368200-499¥22.2659500-999¥22.12321000-2499¥21.98042500-4999¥21.81735000-7499¥21.7154≥7500¥21.6134