型号/品牌/封装
品类/描述
库存
价格(含税)
资料
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品类: 晶体管描述: 氮化镓HEMT的SiC脉冲功率晶体管250W峰值, 1400至00年兆赫, 300μs脉冲, 10 %占空比 GaN on SiC HEMT Pulsed Power Transistor 250W Peak, 1200-1400 MHz, 300μs Pulse, 10% Duty95881+¥5015.945010+¥4970.345525+¥4947.545850+¥4924.7460100+¥4901.9463150+¥4879.1465250+¥4856.3468500+¥4833.5470
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品类: 晶体管描述: 氮化镓HEMT脉冲功率晶体管2.7 - 3.1 GHz的, 100W的峰值, 500US脉冲,占空比为10% GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle75241+¥3315.684910+¥3285.542325+¥3270.471050+¥3255.3997100+¥3240.3284150+¥3225.2571250+¥3210.1858500+¥3195.1145