芯片丝印反查
丝印查询型号
型号查询丝印
| 型号 | 丝印代码 | 厂家 | 封装 | 引脚数 | 描述 | 数据手册 |
|---|---|---|---|---|---|---|
| PDZ11B | ZG | Phi | SOD-323 |
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11V±2.5%, 400mW
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| HN3G01J | ZG | 2-3L1B |
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SILICON N-CHANNEL JUNCTION TYPE FET and NPN EPITAXIAL TYPE TRANSISTOR
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| HN3G01J-GR | ZG | TOSHIBA | SOT-153/SMV/SOT-25 |
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场效应管FET 复合场效应管Complex FET FET+BJT
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| BU4239FVE-TR | ZG | VSOF5 |
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Voltage Detector with Adjustable Delay Time
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| BU4239FWE | ZG | Rhm | VSOF-5 |
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3.9V, +Reset ODO
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| CD-1005-Z8V2 | ZG | Brn | 1005 |
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7.79..8.61V, 5mA, Zzt=7Ω, 200mW
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| HB3402W | ZG | HB | SOT-323F |
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| KDZ3.6VV | ZG | Kec | VSC |
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3.40..3.80V, Izt=5mA, Zzt=130Ω, 100mW
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| MCH3431-G-TL-E | ZG | SANYO | SOT-323/SC-70 |
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场效应管FET MOSFET-N沟道MOSFET N-Channel
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| MCH3431-TL-E | ZG | SANYO | SOT-323/SC-70 |
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场效应管FET MOSFET-N沟道MOSFET N-Channel
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PBSS4032PD
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ZG | NXP | SOT457/TSOP6 |
6
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30 V, 2.7 A PNP low V_CEsat (BISS) transistor
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| PBSS4320T | ZG | NXP | SOT23 |
3
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20 V NPN low VCEsat transistor
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| TZT3V6CW | ZG | Ttr | SOT-23 |
3
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Dual, 3.4..3.8V, Izt=5mA, Zzt=90, 300mW
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| TPS3839G33DQNR | ZG | X2SON-4 |
4
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Ultra-Low 150nA, Ultra-Small Voltage Supervisor
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| TPS3839G33DQNT | ZG | TI | 4 |
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Ultra-Low 150nA, Ultra-Small Voltage Supervisor
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| TCMM3Z11VC | ZG | Tac | SOD-323F |
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11V±5%, Izt=5mA, Zzt=18Ω, 200mW
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| R1210N562D | ZG | Ric | SOT-23-5 |
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PWM step-up, 5.6V, 180KHz, +CE, ext, transistor
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| KTN2222AS | ZG | Kec | SOT-23 |
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GP, 75V, 600mA, 330mW, B=120..360, >300MHz
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| KTN2222AU | ZG | Kec | SOT-323 |
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GP, 75V, 600mA, 330mW, B=120..360, >300MHz
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| PMZ290UN | ZG | Nxp | SOT883 |
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20 V，单N沟道Trench MOSFET
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| MM3Z11VC | ZG | FAIRCHILD | SOD-323FL |
2
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10.45..11.55V, Zzt=18Ω, Izt=5mA, 200mW
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| BU4239F | ZG | Rhm | SOP-4 |
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3.9V, +Reset ODO
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| BU4239F-TR | ZG | SOT-343R |
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Voltage Detector with Adjustable Delay Time
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| BU4239G | ZG | Rhm | SSOP-5 |
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3.9V, +Reset ODO
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| PDTC114EE | ZG | Nxp | SOT416 |
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NPN配电阻晶体管；R1 = 10 kΩ，R2 = 10 kΩ
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| BCX70RG | ZG | Sil | SOT-23 |
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GP, 45V, 100mA, 330mW, B= 120..220, 250MHz
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| 2SK3471 | ZG | TOSHIBA | SOT-89/PW-Mini |
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场效应管FET MOSFET-N沟道MOSFET N-Channel
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| RP201K381D | ZG | Ric | DFN1212-6 |
6
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LDO, 3.8V±1%, 150mA, +CE, CL, AE(Mode)
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| BZX284-C13 | ZG | Phi | SOD-110 |
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13V±5%, 400mW
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| CD-0603-Z8V2 | ZG | Brn | 0603 |
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7.79..8.61V, 5mA, Zzt=7Ω, 150mW
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| CD1005-Z8V2 | ZG | BOURNS | 1005 |
2
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7.79..8.61V, 5mA, Zzt=7Ω, 200mW
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ESD5Z6.0T1
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ZG | SOD-523 |
2
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6.0V Transient Voltage Suppressor
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| ESD5Z6.0T1G | ZG | ON | SOD?523 |
2
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ESD Protection Diode, SOD-523
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| 2SA1182 | ZG | SC-59 |
3
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Silicon PNP Epitaxial Transistor
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| FMMT5551TA | ZG | zetex | SOT-23/SC-59 |
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三极管Bipolar Junction Transistors(BJT) NPN
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| RW1C025ZPT2CR | ZG | WEMT6 |
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1.5V Drive Pch MOSFET
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| 2N7002BKV | ZG | NXP | SOT666 |
6
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60 V, 340 mA dual N-channel Trench MOSFET
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| CD0603-Z8V2 | ZG | BOURNS | 0603 |
2
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7.79..8.61V, 5mA, Zzt=7Ω, 150mW
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