芯片丝印反查
丝印查询型号
型号查询丝印
| 型号 | 丝印代码 | 厂家 | 封装 | 引脚数 | 描述 | 数据手册 |
|---|---|---|---|---|---|---|
| NESG2021M16 | zE | SOT-23 |
3
|
NPN SiGe RF TRANSISTOR
|
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| RW1A020ZP | ZE | WEMT6 |
6
|
1.5V Drive Pch MOSFET
|
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| RW1A020ZPT2R | ZE | WEMT6 |
|
1.5V Drive Pch MOSFET
|
||
| RZR020P01 | ZE | TSMT3 |
3
|
1.5V Drive Pch MOSFET
|
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| RZR020P01TL | ZE | TSMT3 |
|
1.5V Drive Pch MOSFET
|
||
| RZF020P01 | ZE | TUMT3 |
3
|
1.5V Drive Pch MOSFET
|
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| RZF020P01TL | ZE | TUMT3 |
|
1.5V Drive Pch MOSFET
|
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| TIG065E8-TL-H | ZE | ECH8 |
|
IGBT, N-Channel, 150 A, 400 V
|
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| KDZ3.0VV | ZE | Kec | VSC |
|
2.80..3.20V, Izt=5mA, Zzt=120Ω, 100mW
|
|
SMAJ54CA
|
ZE | Vs | DO-214AC |
|
Vrwm=54V, Vbr=60.0..66.3V, 4.6A, 400W(1ms), Bidirectional
|
|
2SJ508
|
ZE | SOT-89 |
3
|
100V 1A 1.9 Ohm Power MOSFET
|
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| CZRF52C6V8 | ZE | COMCHIP | 1005 |
2
|
6.46..7.14V, Izt=5mA, Zzt=8Ω, 200mW
|
|
| MMBT4123 | ZE | Nat | SOT23 |
3
|
NPN通用晶体管
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PDZ9.1BF
|
ZE | PANJIT | SOD-323FL |
2
|
8.85..9.23V, Zzt=10Ω, Izt=5mA, 400mW
|
|
CD0603-Z6V8
|
ZE | BOURNS | 0603 |
2
|
6.46..7.14V, 5mA, Zzt=8Ω, 150mW
|
|
| P4SMAJ54CA | ZE | Mco | DO-214AC |
|
Vbr=54V, 4.6A, 400W(1ms), Bidirectional
|
|
CZRER52C6V8
|
ZE | COMCHIP | 0503 |
2
|
6.46..7.14V, Izt=5mA, Zzt=8Ω, 150mW
|
|
| CZRFR52C6V8 | ZE | COMCHIP | 1005 |
2
|
6.46..7.14V, Izt=5mA, Zzt=8Ω, 200mW
|
|
| CD-0603-Z6V8 | ZE | Brn | 0603 |
|
6.46..7.14V, 5mA, Zzt=8Ω, 150mW
|
|
| 2S3.3VESPT | ZE | CHENMKO | SC-79 |
2
|
Vbr=5V, Vrwm=3.3V, 11.2A, 150W(1ms)
|
|
PBSS4240T
|
ZE | NXP | SOT23 |
3
|
40 V; 2 A NPN low VCEsat (BISS) transistor
|
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| ZGFM1062-MH | ZE | Frm | SOD-123H |
|
62V±10%, Zzt=125Ω(Izt=4mA), 1W
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| ZGFM1062-N | ZE | FORM | SOD-123F |
2
|
58.9..65.1V, Izt=4.0mA, Zzt=125Ω, 1W
|
|
| 2N5401S | ZE | SOT-23 |
3
|
EPITAXIAL PLANAR PNP TRANSISTOR
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| R1210N542D | ZE | Ric | SOT-23-5 |
|
PWM step-up, 5.4V, 180KHz, +CE, ext, transistor
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| P4SMAJ220AC | ZE | Pjt,Srj | DO-214AC |
|
Vbr=170V, 1.1A, 400W (1ms), Bidirectional
|
|
| TCMM3Z9V1C | ZE | Tac | SOD-323F |
|
9.1V±5%, Izt=5mA, Zzt=14Ω, 200mW
|
|
IP4234CZ6
|
ZE | Nxp | SOT457 |
|
单USB 2.0 ESD保护，符合IEC 61000-4-2第四级标准
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| 2SK217 | ZE | MPAK |
3
|
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| 2SK217ZE | ZE | HITACHI | SOT-23/SC-59 |
|
场效应管FET MOSFET-N沟道MOSFET N-Channel
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| 2SK217-E | ZE | Ren | SOT-23 |
3
|
VHF, 30V, 20mA, 150mA, Idss=6..12mA, Up<2.5V
|
|
| 2SK217E | ZE | Renesas(Hitachi) | MPAK-3 |
|
N- MOSFET
|
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| 2SK2373ZE | ZE | RENESAS | SOT-23/SC-59 |
|
场效应管FET MOSFET-N沟道MOSFET N-Channel
|
|
| RP201K361D | ZE | Ric | DFN1212-6 |
6
|
LDO, 3.6V±1%, 150mA, +CE, CL, AE(Mode)
|
|
BU4237F-TR
|
ZE | SOT-343R |
|
Voltage Detector with Adjustable Delay Time
|
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BU4237FVE-TR
|
ZE | VSOF5 |
|
Voltage Detector with Adjustable Delay Time
|
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| BU4237FWE | ZE | Rhm | VSOF-5 |
|
3.7V, +Reset ODO
|
|
BZX284-C11
|
ZE | Phi | SOD-110 |
|
11V±5%, 400mW
|
|
| CD-1005-Z6V8 | ZE | Brn | 1005 |
|
6.46..7.14V, 5mA, Zzt=8Ω, 200mW
|
|
BU4237G-TR
|
ZE | SOT23-5 |
|
Voltage Detector with Adjustable Delay Time
|
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PMBT3946VPN
|
ZE | Nxp | SOT666 |
|
40 V，200 mA NPN/PNP开关晶体管
|
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TPS3839G12DQNT
|
ZE | TI | 4 |
|
Ultra-Low 150nA, Ultra-Small Voltage Supervisor
|
|
CD1005-Z6V8
|
ZE | BOURNS | 1005 |
2
|
6.46..7.14V, 5mA, Zzt=8Ω, 200mW
|
