芯片丝印反查
丝印查询型号
型号查询丝印
| 型号 | 丝印代码 | 厂家 | 封装 | 引脚数 | 描述 | 数据手册 |
|---|---|---|---|---|---|---|
| RU101 | ZA |
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SMT Pack
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| BU4233F-TR | ZA | SOT-343R |
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Voltage Detector with Adjustable Delay Time
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BU4233G-TR
|
ZA | SOT23-5 |
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Voltage Detector with Adjustable Delay Time
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BU4233FVE-TR
|
ZA | VSOF5 |
|
Voltage Detector with Adjustable Delay Time
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| 15GN01M-tl-e | ZA | SANYO | SOT-323/SC-70/MCP |
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三极管Bipolar Junction Transistors(BJT) NPN
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| 15GN01MA-TL-E | ZA | MCP |
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Bip Transistor 8V 50mA fT;1.5GHz NPN Single
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CZRER52C5V1
|
ZA | COMCHIP | 0503 |
2
|
4.85..5.36V, Izt=5mA, Zzt=60Ω, 150mW
|
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| CZRFR52C5V1 | ZA | COMCHIP | 1005 |
2
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4.85..5.36V, Izt=5mA, Zzt=60Ω, 200mW
|
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| CZRQR52C5V1 | ZA | COMCHIP | 0402 |
2
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4.85..5.36V, Izt=5mA, Zzt=60Ω, 125mW
|
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| CPH6424-TL-E | ZA | SANYO | SOT-163/SOT23-6/CPH6 |
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场效应管FET MOSFET-N沟道MOSFET N-Channel
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| KDZ2.0VV | ZA | Kec | VSC |
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1.85..2.15V, Izt=5mA, Zzt=100Ω, 100mW
|
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RB520S30
|
ZA | Nxp | SOD523 |
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200 mA低Vf MEGA肖特基势垒整流器
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| RB520CS3002L | ZA | Nxp | SOD882 |
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200 mA低VF MEGA肖特基势垒整流器
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| ZGFM1043-N | ZA | FORM | SOD-123F |
2
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40.9..45.2V, Izt=6.0mA, Zzt=70Ω, 1W
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| 2N3906S | ZA | Kec | SOT-23 |
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GP, 40V, 200mA, 350mW, B=60..300, >250MHz
|
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| CD1005-Z5V1 | ZA | BOURNS | 1005 |
2
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4.85..5.36V, 5mA, Zzt=60Ω, 200mW
|
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| ECH8420-TL-H | ZA | ECH8 |
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Power MOSFET 20V 14A 6.8 mOhm Single N-Channel
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| PDZ6.2B | ZA | Phi | SOD-323 |
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6.2V±2.5%, 400mW
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PDZ6.2BF
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ZA | PANJIT | SOD-323FL |
2
|
6.06..6.33V, Zzt=50Ω, Izt=5mA, 400mW
|
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| BCW60RA | ZA | Telefunken | SOT23 |
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| ENGSD05UT2 | ZA | ON | SOD323/0805-5V |
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二极管Diodes 瞬态抑制二极管(TVS)/(ESD) 单通道1 Channel
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BZA462A
|
ZA | Nxp | SOT457 |
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四倍ESD瞬态电压抑制器
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BSS84AKM
|
ZA | Nxp | SOT883 |
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50 V，230 mA P沟道Trench MOSFET
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SD05T1G
|
ZA | ON | SOD323/0805-5V |
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二极管Diodes 瞬态抑制二极管(TVS)/(ESD) 单通道1 Channel
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SVC230-TB-E
|
ZA | SOT-23 |
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Diffused Junction Type Silicon Diode Varactor Diode
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| SVC230 | ZA | CP/SOT23 |
3
|
Diffused Junction Type Silicon Diode Varactor Diode
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| 2N2904U | ZA | US6 |
6
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EPITAXIAL PLANAR NPN TRANSISTOR
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| 2N2906E | ZA | TES6 |
6
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EPITAXIAL PLANAR PNP TRANSISTOR
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| 2SK2615 | ZA | SOT-89 |
3
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60V 2A 0.37 Ohm Power MOSFET
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| 2N3906E | ZA | ESM/SOT523 |
3
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EPITAXIAL PLANAR PNP TRANSISTOR
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2N3906U
|
ZA | Kec | USM |
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GP, 40V, 200mA, 100mW, B=60..300, >250MHz
|
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| 15GN01F | ZA | SANYO | SSFP/SOT523 |
3
|
NPN Epitaxial Planar Silicon Transistor
|
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| 15GN01M | ZA | MCP/SOT323 |
3
|
NPN Epitaxial Planar Silicon Transistor
|
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BZX284-C7V5
|
ZA | Phi | SOD-110 |
|
7.5V±5%, 400mW
|
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| CD-1005-Z5V1 | ZA | Brn | 1005 |
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4.85..5.36V, 5mA, Zzt=60Ω, 200mW
|
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| CD-0603-Z5V1 | ZA | Brn | 0603 |
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4.85..5.36V, 5mA, Zzt=60Ω, 150mW
|
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| RT9809-27CB | ZA | Rct | SOT-23 |
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2.7V±2%, -Reset PPO
|
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| ZGFM1043-MH | ZA | Frm | SOD-123H |
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43V±10%, Zzt=70Ω(Izt=6mA), 1W
|
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| uPA507TE | ZA | SC-95/SOT23-5 |
5
|
N-CHANNEL MOS FET AND SCHOTTKY BARRIER DIODE
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2PC4617R
|
ZA | Nxp | SOT416 |
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NPN通用晶体管
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CZRUR52C5V1
|
ZA | COMCHIP | 0603 |
2
|
4.85..5.36V, Izt=5mA, Zzt=60Ω, 150mW
|
|
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PEMH9
|
ZA | Nxp | SOT666 |
|
NPN/NPN配电阻晶体管；R1 = 10?kΩ，R2 = 47?kΩ
|
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TPS799185YZUT
|
ZA | TI | 5 |
|
200mA, Low Quiescent Current, Ultra-Low Noise, High PSRR Low Dropout Linear Regulator
|
|
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TSZL52C5V1
|
ZA | TSC | 1005 |
2
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4.85..5.36V, Izt=5mA, Zzt=60Ω, 200mW
|
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TPS799185YZUR
|
ZA | YZU-5 |
5
|
Single Output LDO, 200mA, Fixed (1.85V), Ultra-Low Noise, High PSRR
|
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R1210N502D
|
ZA | Ric | SOT-23-5 |
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PWM step-up, 5V, 180KHz, +CE, ext, transistor
|
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| MM3Z6V2C | ZA | FAIRCHILD | SOD-323FL |
2
|
5.89..6.51V, Zzt=9Ω, Izt=5mA, 200mW
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