芯片丝印反查
丝印查询型号
型号查询丝印
| 型号 | 丝印代码 | 厂家 | 封装 | 引脚数 | 描述 | 数据手册 |
|---|---|---|---|---|---|---|
| DMC56205 | K3 | SMini5-F3-B |
5
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Dual Silicon NPN epitaxial planar type transistor with R
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| SSM5818SAPT | K3 | Chm | SOD-123S |
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Rectifier, Schottky, 30V, 1A, Vf<0.55V(1A)
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| TPS62623YFD | K3 | DSBGA-6 |
6
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600-mA, 6-MHz, Vout 1.225V, 90% Efficiency Step-Down Converter
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| TPS62623YFDR | K3 | TI | 6 |
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600-mA, 6-MHz, Vout 1.225V, 90% Efficiency Step-Down Converter
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TPS62623YFDT
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K3 | TI | 6 |
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600-mA, 6-MHz, Vout 1.225V, 90% Efficiency Step-Down Converter
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| MMSZ5253BT1 | K3 | SOD-123 |
2
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25V 500 mW ZENER DIODE
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PBLS4003V
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K3 | Nxp | SOT666 |
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40 V PNP BISS负载开关
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| RN5RG33AA | K3 | Ric | SOT-23-5 |
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Ext, transistor, 3.3V±2.5% 1A
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| RT9167A-18CBR | K3 | Rct | SOT-23-5 |
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LDO, +CE, 1.8V±2%, 600mA
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| RT9170-30CX | K3 | SOT-89 |
3
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300mA CMOS LDO Regulator with 15uA Quiescent Current
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| 2SC3143-3 | K3 | San | SOT-23 |
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AF-Drv, 180V, 80mA, 200mW, 150MHz, B=60..120
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| R3111N232C | K3 | Pti | SOT-23 |
3
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2.3V±2%, -Reset ODO
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| BZD27C12P | K3 | Lge | SOD123FL |
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Vbr=11.4V, Vcl=17V, 8.8A, 150W(1ms)
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| E11FS2 | K3 | NIHON | SOT-89/TO-243AB |
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二极管Diodes 整流二极管Rectifiers 单管Single
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BB145C
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K3 | Phi | SOD-523 |
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VCO, 10V, 20mA, 2.55/6.4pF(4V/1V, 1MHz), <0.6Ω
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| RN2964FS | K3 | Tos | FS6 |
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Dual, Sw, 20V, 50mA, 50mW, R1/R2=47k/47k
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| LM48861TM | K3 | Nsc | BGA-12 |
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AF PA, 1.2..2.8V±2%, 2x26mW(2V/16?), I2C volume
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| LM48861TMX | K3 | TMD12AAA |
12
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Ground-Referenced, Ultra Low Noise, Stereo Headphone Amplifier
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| RP103Q301D | K3 | Ricoh | SC-82AB |
4
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LDO, 3V±1%, 150mA, +CE, CL
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| 2SK2839 | K3 | SP |
3
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30V 10A 0.04 Ohm Power MOSFET
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2SK3796-3-TL-E
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K3 | SC-75 |
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Junction FET 30V 10mA IDSS;0.6 to 6.0 mA Nch Single
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| ELM7643HAB | K3 | Elm | SOT-23 |
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4.3V±2%, +Reset PPO, 250ms
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| R5426N104BB | K3 | Ric | SOT-23-6 |
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Li-Ion, over-charge/discharge protection, Vc/d=1.04V
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| R5426D104BB | K3 | Ric | SON-6 |
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Li-Ion, over-charge/discharge protection, Vc/d=1.03V
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PESD3V3L5UY
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K3 | NXP | SOT363 |
6
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Low capacitance unidirectional quadruple ESD protection diode arrays
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| MMSZ5253B | K3 | Mot | SOD-123 |
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25V±5%, Zzt=35Ω, 500mW
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| MMBZ5253B | K3 | Pjt | SOT-23 |
3
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23.75..26.25V, Zzt=35, Izt=5mA, 410mW
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| BC857BS-13-F | K3 | DIODES | SOT-363 |
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三极管Bipolar Junction Transistors(BJT) 复合三极管Complex Bipolar Transistor PNP+PNP
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BZX384-B3V0
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K3 | Phi | SOD-323 |
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3.0V±2.5%, Izt=5mA, Zzt=80Ω, 200mW
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